PART |
Description |
Maker |
M27V800 |
8Mbit (1Mb x8 or 512Kb x16) Low Voltage UV EPROM and OTP EPROM(8Mb低压UV EPROM和OTP EPROM)
|
意法半导
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M29W800DT M29W800DT70M1T M29W800DT70M6T M29W800DT7 |
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory
|
STMicroelectronics
|
M29F800D |
8 MBIT (1MB X8 OR 512KB X16, BOOT BLOCK) 5V SUPPLY FLASH MEMORY
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STMicroelectronics
|
M29F800AB90M1 M29F800AB90N1 |
8 MBIT (1MB X8 OR 512KB X16, BOOT BLOCK) SINGLE SUPPLY FLASH MEMORY
|
SGS Thomson Microelectronics
|
M29F800AB M29F800AT 6442 |
8 Mbit (1Mb x8 or 512Kb x16, Boot Block)Single Supply Flash Memory From old datasheet system
|
STMicro
|
M29W800AB M29W800AB120ZA5T M29W800AT80ZA5T M29W800 |
8 Mbit 1Mb x8 or 512Kb x16 / Boot Block Low Voltage Single Supply Flash Memory Low-Power Single Buffer/Driver with 3-State Output 5-DSBGA -40 to 85 8兆x812KB的x16插槽,引导块低压单电源闪 RESISTOR: 100 OHM, 1/10W, 1%, PACKAGE 0805 81兆x812KB的x16插槽,引导块低压单电源闪 8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory 8兆x812KB的x16插槽,引导块低压单电源闪 Low-Power Single Buffer/Driver with 3-State Output 5-SOT-23 -40 to 85
|
ST Microelectronics 意法半导 STMicroelectronics N.V.
|
M27W801 -M27W801 |
8Mbit (1Mb x 8) Low Voltage OTP EPROM(8M位低压一次可编程 EPROM) 8Mbit (1Mb x 8) Low Voltage OTP EPROM(8M浣?????娆″?缂?? EPROM)
|
意法半导
|
M27C800 M27C800-120F1TR M27C800-120F6TR 27C800 M27 |
512K X 16 OTPROM, 120 ns, PDSO44 512K X 16 OTPROM, 50 ns, PQCC44 Octal Bus Transceiver With 3-State Outputs 20-TSSOP -40 to 85 8兆x812KB的x16紫外线存储器和OTP存储 Octal Bus Transceiver With 3-State Outputs 20-TVSOP -40 to 85 8兆x812KB的x16紫外线存储器和OTP存储 8 Mbit 1Mb x8 or 512Kb x16 UV EPROM and OTP EPROM 8兆x812KB的x16紫外线存储器和OTP存储 Octal Bus Transceiver With 3-State Outputs 20-SOIC -40 to 85 8兆x812KB的x16紫外线存储器和OTP存储 16-Bit Bus Transceiver and Transparent D-Type Latch with 8 Independent Buffers 96-LFBGA -40 to 85 8兆x812KB的x16紫外线存储器和OTP存储 32-Bit Buffer/Driver With 3-State Outputs 96-LFBGA -40 to 85 8兆x812KB的x16紫外线存储器和OTP存储 Octal Buffer/Driver With 3-State Outputs 20-SOIC -40 to 85 Octal Buffer/Driver With 3-State Outputs 20-TSSOP -40 to 85 8 MBIT (1MB X8 OR 512KB X16) UV EPROM AND OTP EPROM
|
STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
MPC2105C MPC2106CDG66 |
(MPC2105C / MPC2106C) 512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms 512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms 128K X 72 CACHE SRAM MODULE, 9 ns, PDMA178
|
Motorola, Inc. Motorola Mobility Holdings, Inc.
|
M29W160EB70N1 M29W160EB70N1T M29W160EB70N6 M29W160 |
16-Bit Edge-Triggered D-Type Flip-Flop With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85 16兆位(含2Mb x8兆x16插槽,引导块3V电源快闪记忆 CAP 3300UF 6.3V ELECT FC RADIAL 16兆位(含2Mb x8兆x16插槽,引导块V电源快闪记忆 16 Mbit (2Mb x8 or 1Mb x16 / Boot Block) 3V Supply Flash Memory 16 MBIT (2MB X8 OR 1MB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY 70ns; V(in/out): -0.6 to 0.6V; 16Mbit (2Mb x 8 or 1Mb x 16, boot block) 3V supply flash memory
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STMicroelectronics N.V. ST Microelectronics SGS Thomson Microelectronics
|
M29W400DT M29W400DT45M1E M29W400DT45M1F M29W400DT4 |
4 Mbit (512Kb x8 or 256Kb x16 Boot Block) 3V Supply Flash Memory 4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory 4兆位12KB的x856Kb的x16插槽,引导块V电源快闪记忆
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STMICROELECTRONICS[STMicroelectronics] ST Microelectronics 意法半导 STMicroelectronics N.V.
|
M27W400 M27W400-100B6TR M27W400-100F6TR M27W400-10 |
4 Mbit (512Kb x8 or 256Kb x16), Low Voltage UV EPROM and OTP EPROM 512K X 8 UVPROM, 100 ns, CDIP40 4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16低压紫外线可擦写可编程只读存储器和OTP存储 256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM
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SGS Thomson Microelectronics STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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